Issue 41, 2022

Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

Abstract

Exploring energy storage materials with ultralong cycle lifespan and high energy/power density in extremely high-temperature environments is crucial. In this work, a gallium nitride (GaN) crystal is applied in a high-temperature energy storage field for the first time, and the relevant reasons for the improved energy storage are proposed. A few-layered GaN crystal rich in N-vacancies is designed and fabricated via an efficient and facile strategy, which further increases its specific area and active sites. An ionic-liquid-based supercapacitor device is developed by combining the GaN and ionic liquids. This device exhibits high specific capacity (52.58 mF cm−2 at 0.8 mA cm−2) and a wide voltage window (0–2.7 V). Even at a high temperature of 150 °C and a scan rate of up to 50 V s−1, 86.2% capacity is retained at 8 mA cm−2 over 10 000 cycles. Additionally, the energy storage mechanism of GaN with N vacancies is further investigated using density functional theory calculations. This study systematically demonstrates the application potential of GaN crystals in the field of high-temperature energy storage, and provides a strategy for the application of wide-bandgap semiconductors in a new field.

Graphical abstract: Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

Supplementary files

Article information

Article type
Paper
Submitted
07 Jun 2022
Accepted
20 Sep 2022
First published
20 Sep 2022

J. Mater. Chem. A, 2022,10, 22007-22015

Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

S. Lv, S. Wang, T. Wang, L. Liu, J. Yu, T. Dong, G. Wang, Z. Wang, C. Liang, L. Li, X. Xu and L. Zhang, J. Mater. Chem. A, 2022, 10, 22007 DOI: 10.1039/D2TA04540K

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