Temperature-dependent performance metrics of tin-doped perovskite photodetectors

Abstract

Metal halide perovskites have emerged as a set of promising candidates for next generation photodetectors, benefiting from their excellent optoelectronic properties, solution-processability and exceptional defect tolerance. It is also well recognized in the field that perovskites are akin to intrinsic or slightly doped semiconductors and their electrical properties, such as the carrier concentration and conductivity, are highly dependent on the temperature. However, most of the reported studies investigated the properties and performance metrics at room temperature. Temperature-dependent performance metrics of perovskite photodetectors are barely reported, which is crucial for operational devices and temperature calibration. In this study, we introduce a generic strategy to dope MAPbI₃ and FA_0.83Cs_0.17PbI_2.7Br_0.3 perovskites with trace amounts of Sn, which effectively modulated their optoelectronic properties, and resulted in less temperature-dependency. In particular, photodetectors based on 0.002% Sn-doped FA_0.83Cs_0.17PbI_2.7Br_0.3 perovskites exhibit high responsivity, fast response, and improved thermal stability, which are promising for real applications.