Issue 19, 2022

Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy

Abstract

The concentration and distribution of oxygen vacancies in oxide materials not only lead to emergent phenomena, such as the enormous electrical resistance variation in perovskite nickelates, but also dominate the performance of related resistive random access memories. Therefore, it is very important to control oxygen vacancies in oxide materials at widely different levels of concentration. Here we report a strategy to realize oxygen vacancy doping via constructing a LaNiO3/SmNiO3 interface diode working with redistribution of oxygen ions across the heterointerface driven by an electrical field. The doping effect can not only affect the electrical conductivity in the SmNiO3 film layer, but also modify the interface properties of the SmNiO3/Nb:SrTiO3 heterostructure, leading to important enhancement of switching characteristics. Two bipolar resistive switching (BRS) modes with opposite polarity and different electrical characteristics are found to coexist in the same epitaxial LaNiO3/SmNiO3/Nb:SrTiO3 heterostructure fabricated through selective area epitaxy. The dual BRS phenomena can be explained by the electrochemical migration of the oxygen vacancies and oxygen ion redistribution process. Our finding suggests that the interfacial oxygen vacancy doping is an effective method to enhance the resistive switching in a nickelate-based electronic device, showing high potential for non-volatile memory applications.

Graphical abstract: Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy

Supplementary files

Article information

Article type
Paper
Submitted
15 Jan 2022
Accepted
14 Apr 2022
First published
19 Apr 2022

J. Mater. Chem. C, 2022,10, 7707-7716

Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy

Y. Zhang, M. Liu, C. Ma, L. Lu and C. Y. Han, J. Mater. Chem. C, 2022, 10, 7707 DOI: 10.1039/D2TC00204C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements