A B- and F-enriched buffering interphase enables a high-rate and high-stability SiOx/C anode

Zhaoyu Zhang; Yufei Zhang; Minghui Ye; Yongchao Tang; Zhipeng Wen; Xiaoqing Liu; Cheng Chao Li

doi:10.1039/D3CC03427E

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A B- and F-enriched buffering interphase enables a high-rate and high-stability SiO_x/C anode†

Zhaoyu Zhang,^a Yufei Zhang,^a Minghui Ye,^a Yongchao Tang,^a Zhipeng Wen,^a Xiaoqing Liu*^a and Cheng Chao Li

*^a

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* Corresponding authors

^a Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China
E-mail: licc@gdut.edu.cn, liu@gdut.edu.cn

Abstract

A facile, universal surface engineering strategy is proposed to address the volume expansion and slow kinetic issues encountered by SiO_x/C anodes. A B-/F-enriched buffering interphase is introduced onto SiO_x/C by thermal treatment of pre-adsorbed lithium salts at 400 °C. The as-prepared anode integrates both high-rate performance and long-term cycling durability.

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Article information

DOI: https://doi.org/10.1039/D3CC03427E
Article type: Communication
Submitted: 17 Jul 2023
Accepted: 14 Aug 2023
First published: 15 Aug 2023

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Chem. Commun., 2023,59, 10980-10983

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A B- and F-enriched buffering interphase enables a high-rate and high-stability SiO_x/C anode

Z. Zhang, Y. Zhang, M. Ye, Y. Tang, Z. Wen, X. Liu and C. C. Li, Chem. Commun., 2023, 59, 10980 DOI: 10.1039/D3CC03427E

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Chemical Communications