Issue 18, 2023
From the journal:

Chemical Communications

Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

Se Hyun Kim,a   Geun Taek Yu,a   Geun Hyeong Park,a   Dong Hyun Lee,a   Ju Yong Park,a   Kun Yang,a   Eun Been Lee,a   Je In Lee*a  and  Min Hyuk Park*ab  

* Corresponding authors

a School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
E-mail: jilee@pnu.ac.kr

b Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
E-mail: minhyuk.park@snu.ac.kr

Abstract

Correction for ‘Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer’ by Se Hyun Kim et al., Chem. Commun., 2021, 57, 12452–12455, https://doi.org/10.1039/D1CC04966F.

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Article information

DOI
https://doi.org/10.1039/D3CC90042H
Article type
Correction
Submitted
26 Jan 2023
Accepted
26 Jan 2023
First published
17 Feb 2023
This article is Open Access
Creative Commons BY license

Chem. Commun., 2023,59, 2668-2668

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Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

S. H. Kim, G. T. Yu, G. H. Park, D. H. Lee, J. Y. Park, K. Yang, E. B. Lee, J. I. Lee and M. H. Park, Chem. Commun., 2023, 59, 2668 DOI: 10.1039/D3CC90042H

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