Issue 3, 2023

Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering

Abstract

It is always interesting to understand how the interplay between two perturbations, affects any physical process and gets manifested in a semiconductor. Temperature- and wavelength-dependent Raman Spectromicroscopy was performed on heavily-doped Si to reveal an unusual anti-anharmonic effect. Additionally, the energy dispersive behaviour of Fano coupling strength was also studied and its possible interrelation with the observed anti-anharmonic effect was explored. A systematic study revealed that at the different excitation wavelengths, the strength of the Fano interaction was different, where the involved electron–phonon (Fano-Fano-interferon) bound states were counted together with different energies. By understanding how the interplay manifests in terms of the Raman line shape, a method to calculate the Fano-interferon dissociation energy was developed. The slope of the Raman linewidth at different excitation wavelengths with temperature showed a negative temperature coefficient and sign reversal on decreasing the doping concentration. A wavelength-dependent empirical relation is proposed to calculate the required thermal energy, required to dissociate the electron–phonon bound state.

Graphical abstract: Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering

Supplementary files

Article information

Article type
Communication
Submitted
07 Oct 2022
Accepted
16 Dec 2022
First published
16 Dec 2022

Phys. Chem. Chem. Phys., 2023,25, 1627-1631

Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering

C. Rani, S. Kandpal, T. Ghosh, L. Bansal, M. Tanwar and R. Kumar, Phys. Chem. Chem. Phys., 2023, 25, 1627 DOI: 10.1039/D2CP04686E

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