Carrier mobility of two-dimensional Dirac materials: the influence of optical phonon scattering

Abstract

We developed an analytical formula to calculate the influence of optical phonons on the mobility of two-dimensional Dirac materials at arbitrary temperature and arbitrary doping concentration. The method was combined with first-principles calculations to show that the effect of optical phonons on mobility is not negligible for typical Dirac materials such as graphene even though the occupation number of optical phonons is relatively small. Unlike the treatment of electron–acoustic phonon coupling, the energy change of electrons in the scattering process with optical phonons is crucial, which leads to a non-power temperature dependence of mobility under weak doping. The formalism was applied to calculate and analyze the mobility of two well-known Dirac materials, α-graphyne and the VCl₃ monolayer, which differs by one to two orders of magnitude.