Preparation and photocatalytic activity of ZnGa2O4-β-Ga2O3 thin films

Abstract

ZnGa₂O₄ and ZnGa₂O₄-β-Ga₂O₃ thin films were prepared via aerosol-assisted chemical vapor deposition (AACVD) using various ratios of the Zn and Ga precursors, resulting in the formation of amorphous ZnGa₂O₄ and Ga₂O₃. The formation of crystalline zinc gallate and heterostructure zinc gallate thin films was achieved by annealing the resulting films at high temperatures under air. The ZnGa₂O₄-β-Ga₂O₃ thin films showed enhanced photocatalytic activity compared with ZnGa₂O₄. The photocatalytic enhancement of the ZnGa₂O₄-β-Ga₂O₃ is explained by the formation of type-II band alignment at the interfaces between ZnGa₂O₄ and Ga₂O₃, resulting in enhanced photoinduced charge separation in the material.