Issue 10, 2023

Aldol condensation-polymerized semiconducting polymers based on a BDOPV unit with near infrared absorption and better n-doped ability

Abstract

Development of semiconducting polymers with a low bandgap is essential for organic electronic devices. However, most of the currently reported organic semiconductors possess absorption edges of less than 1000 nm. Herein, a series of novel semiconducting polymers with a low bandgap and better n-doping behavior were synthesized. These semiconducting polymers based on a benzodifurandione-centered oligo(p-phenylene vinylene) (BDOPV) unit and various copolymerization units were synthesized via a modified aldol condensation protocol from bis-isatin and bis-oxindole monomers. As a result, the polymers with different constitutional units present various charge transfer characteristics, from the n-type character for PFBP switched into an ambipolar and even p-type character for PBBP. In addition, these semiconducting polymers can be easily doped with an n-type dopant, such as N-DMBI. We believe that this BDOPV-based polymer is a potential candidate for the development of low bandgap semiconducting polymers.

Graphical abstract: Aldol condensation-polymerized semiconducting polymers based on a BDOPV unit with near infrared absorption and better n-doped ability

Supplementary files

Article information

Article type
Paper
Submitted
16 Feb 2023
Accepted
11 Apr 2023
First published
12 Apr 2023
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2023,4, 2301-2307

Aldol condensation-polymerized semiconducting polymers based on a BDOPV unit with near infrared absorption and better n-doped ability

L. Tian, A. Wang, H. Lin, W. Cheng, M. Shang, S. Xu and X. Zhou, Mater. Adv., 2023, 4, 2301 DOI: 10.1039/D3MA00073G

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