Issue 22, 2023

Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices

Abstract

Recently, polyimides (PIs) containing the anthracene moiety have been demonstrated to show a wide range of electrical bistable switching behavior, depending on the chemical structures or electrode materials used in the memory devices. There is a need to develop advanced anthracene-containing PIs having higher memory performance. In this study, a new anthracene-containing diamine, 4-(anthracen-9-ylmethoxy)-1,3-diaminobenzene (AMDA), was synthesized, and polymerized with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) to prepare 6FDA-AMDA PI. For comparison, another PI (6FDA-AnDA PI) was prepared from 6FDA and 2,6-diaminoanthracene (AnDA). 6FDA-AMDA PI and 6FDA-AnDA PI have anthracene moieties in the side and main chains, respectively. 6FDA-AMDA PI showed higher solubility in common organic solvents and less tendency of gelation compared to 6FDA-AnDA PI. The prepared PIs exhibited excellent thermal stability. The Al/6FDA-AMDA PI/indium tin oxide (ITO) device showed write-once-read-many times (WORM) behavior with an on/off ratio up to 106, a threshold voltage of 2.40 V, and a high device yield of 80%. In contrast, the Al/6FDA-AnDA PI/ITO device exhibited WORM behavior with an on/off ratio of up to 104, a threshold voltage at 2.50 V and a 20% device yield. The mechanisms associated with the memory effect are explained using density functional theory (DFT) and time-dependent density functional theory (TD-DFT) calculations. The lower switching voltage and higher device yield of 6FDA-AMDA PI may be attributed to more effective inter-chain charge transfer of the side-chain PI, compared to the main chain PI (6FDA-AnDA PI). This study demonstrates that the 6FDA-AMDA PI is suitable as an active material for solution-processable non-volatile memories.

Graphical abstract: Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices

Supplementary files

Article information

Article type
Paper
Submitted
23 Jul 2023
Accepted
13 Oct 2023
First published
13 Oct 2023
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2023,4, 5706-5715

Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices

S. Lee, S. Park, J. Choi, Y. Choi, H. W. Ji, H. Joung, D. Kim, K. Yoon, G. Ji, D. Choi, J. Lee, K. Paeng, J. Yang, S. Cho and C. Chung, Mater. Adv., 2023, 4, 5706 DOI: 10.1039/D3MA00453H

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