Issue 13, 2023

Edge contacts accelerate the response of MoS2 photodetectors

Abstract

We use a facile plasma etching process to define contacts with an embedded edge geometry for multilayer MoS2 photodetectors. Compared to the conventional top contact geometry, the detector response time is accelerated by more than an order of magnitude by this action. We attribute this improvement to the higher in-plane mobility and direct contacting of the individual MoS2 layers in the edge geometry. With this method, we demonstrate electrical 3 dB bandwidths of up to 18 MHz which is one of the highest values reported for pure MoS2 photodetectors. We anticipate that this approach should also be applicable to other layered materials, guiding a way to faster next-generation photodetectors.

Graphical abstract: Edge contacts accelerate the response of MoS2 photodetectors

Supplementary files

Article information

Article type
Paper
Submitted
07 Apr 2023
Accepted
02 Jun 2023
First published
05 Jun 2023
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2023,5, 3494-3499

Edge contacts accelerate the response of MoS2 photodetectors

F. Strauß, C. Schedel and M. Scheele, Nanoscale Adv., 2023, 5, 3494 DOI: 10.1039/D3NA00223C

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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