Issue 1, 2023

Enhanced photoelectrochemical water oxidation over a surface-hydroxylated BiVO4 photoanode: advantageous charge separation and water dissociation

Abstract

Bismuth vanadate (BiVO4) is one of the most effective photoanode materials for photoelectrochemical water splitting, but its reaction rate is greatly limited by the poor separation efficiency of photo-generated charges and sluggish kinetics. In this work, a surface hydroxylation strategy was carried out to overcome the above-mentioned shortcomings. A simple post-synthetic NaOH immersion method was used to successfully hydroxylate the BiVO4 photoanode surface without affecting its bulk properties. The modified surface hydroxyl group not only promotes the photo-generated charge separation efficiency of hydroxylated BiVO4 but also tailors its local electronic structure to form high-valence Bi(3+x)+ states. The Bi(3+x)+ species serving as the active site is advantageous for water dissociation, thus decreasing the free energy barrier of the potential-determining step for the boosted overall water oxidation kinetics. As a result, the best hydroxylated BiVO4 photoanode achieves a higher photocurrent density of 1.14 mA cm−2 at 1.23 V vs. RHE under visible light irradiation, which is 4.75 times that of bare BiVO4 (0.24 mA cm−2), and moreover, a cathodic shift of 190 mV at 1 mA cm−2 is obtained. Our work affords a practical method with strong operability to improve the intrinsic photoelectrochemical performance of photoanodes by the efficient surface hydroxylation strategy.

Graphical abstract: Enhanced photoelectrochemical water oxidation over a surface-hydroxylated BiVO4 photoanode: advantageous charge separation and water dissociation

Supplementary files

Article information

Article type
Paper
Submitted
08 Sep 2022
Accepted
20 Nov 2022
First published
21 Nov 2022

New J. Chem., 2023,47, 203-210

Enhanced photoelectrochemical water oxidation over a surface-hydroxylated BiVO4 photoanode: advantageous charge separation and water dissociation

Y. Li, F. Xie, Z. Sun, Z. Yu, J. Liu, X. Zhang, Y. Wang, Y. Wang, R. Li and C. Fan, New J. Chem., 2023, 47, 203 DOI: 10.1039/D2NJ04470F

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