ZIF-8 thin films by a vapor-phase process: limits to growth

Abstract

Metal–organic frameworks are a class of porous materials that show promising properties in the field of microelectronics. To reach industrial use of these materials, gas phase techniques are often preferred and were recently introduced. However, the thicknesses achieved are not sufficient, limiting further development. In this work, an improved gas phase process allowing ZIF-8 layer formation of several hundreds of nm using cyclic ligand/water exposures is described. Then, by a combination of in-depth surface analyses and molecular dynamics simulations, the presence and role of hydroxyl defects in the ZIF-8 layer to reach this thickness are established. At the same time, this study unveils an inherent limit of the method: thickness growth is consubstantial with defect repairing upon the crystallites ripening; such defect repairing eventually leads to the decrease of the pore window below the diffusion radius of the incoming linker, thus apparently capping the maximum MOF thickness observable for this type of material topology through this growth method.