Three-dimensional patterning of MoS2 with ultrafast laser

Abstract

Transition metal chalcogenides, a special two-dimensional (2D) material emerged in recent years, possess unique optoelectronic properties and have been used to fabricate various optoelectronic devices. While it is essential to manufacture multifunctional devices with complex nanostructures for practical applications, 2D material devices present a tendency toward miniaturization. However, the controllable fabrication of complex nanostructures on 2D materials remains a challenge. Herein, we propose a method to create designed three-dimensional (3D) patterns on the MoS₂ surface by modulating the interaction between an ultrafast laser and MoS₂. Three different nanostructures, including flat, bulge, and craters, can be fabricated through laser-induced surface morphology transformation, which is related to thermal diffusion, oxidation, and ablation processes. The MoS₂ field effect transistor is fabricated by ultrafast laser excitation which exhibits enhanced electrical properties. This study provides a promising strategy for 3D pattern fabrication, which is helpful for the development of multifunctional microdevices.