Correction: Self-limiting stoichiometry in SnSe thin films
Abstract
Correction for ‘Self-limiting stoichiometry in SnSe thin films’ by Jonathan R. Chin et al., Nanoscale, 2023, 15, 9973–9984, https://doi.org/10.1039/D3NR00645J.
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* Corresponding authors
a
The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
E-mail:
lauren.garten@mse.gatech.edu
b Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
c Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
d Paul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany
e Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
f Physics Department, Karamanoglu Mehmetbey University, Karaman, Turkey
Correction for ‘Self-limiting stoichiometry in SnSe thin films’ by Jonathan R. Chin et al., Nanoscale, 2023, 15, 9973–9984, https://doi.org/10.1039/D3NR00645J.
J. R. Chin, M. B. Frye, D. S. Liu, M. Hilse, I. C. Graham, J. Shallenberger, K. Wang, R. Engel-Herbert, M. Wang, Y. K. Shin, N. Nayir, A. C. T. van Duin and L. M. Garten, Nanoscale, 2023, 15, 17216 DOI: 10.1039/D3NR90187D
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