Increasing porosity in hydrogen-bonded organic frameworks for low-κ interlayer dielectric

Abstract

The development of novel low-κ (κ < 2.4) dielectric materials as interlayer dielectrics (ILDs) to solve crosstalk noise in integrated circuits is of great significance. Hydrogen-bonded organic frameworks (HOFs) have great potential as a promising new class of low-dielectric material. In this work, based on triangular N¹,N³,N⁵-tris(quinolin-6-yl)benzene-1,3,5-tricarboxamide (TQBTC), two new HOFs (HOF-FJU-56 and HOF-FJU-57) have been synthesized at different temperatures for ILDs. They have different porosities caused by various stacking modes of TQBTC. HOF-FJU-57a, which has larger porosity, exhibits a lower dielectric constant of 2.12 at 1 MHz and room temperature. Moreover, HOF-FJU-57a exhibits high thermal stability of its dielectric constant (13 K to 413 K) and ultralow leakage current (∼10⁻¹³ A mm⁻² at 0.5 kV cm⁻¹) as a dielectric. These studies show that HOFs have great potential as a promising new class of low-dielectric material.