Issue 19, 2023

Formation of wide-bandgap, highly transparent and compact Cd1−xZnxS films with dynamically controlled pH in chemical bath deposition

Abstract

Cadmium sulfide has long been used as the buffer layer in thin-film solar cells. Despite its strengths, the problems associated with CdS – a low bandgap, absorption loss, and toxicity of Cd – have resulted in a search for alternate materials. Incorporating Zn results in a higher bandgap but obtaining complete coverage with a flake-free, compact morphology of Cd1−xZnxS films using chemical bath deposition remains an unsolved problem. In this paper, we address the coverage issue and engineer the morphology of Cd1−xZnxS films (x = 0.2, 0.5, and 0.8), focusing on controlling the formation mechanism by dynamically maintaining the pH of the precursor solution throughout the deposition. Heterogeneously grown Cd1−xZnxS films show high uniformity and improved structural properties. With a successive increment of the Zn amount, the Cd1−xZnxS optical bandgap enhances considerably from 2.55 eV to 3.77 eV. By depositing at the right pH, we report – for both low and high Zn – films that are compact and pin-hole free with 100% coverage which is rarely found in the literature. The significant improvement in average visible transmittance (AVT) from 51% (pristine CdS) to 75% (for Cd0.8Zn0.2S) and then to 85% (for Cd0.2Zn0.8S) indicates the potential to improve the efficiency of thin-film solar cells including for some novel applications such as semi-transparent photovoltaics.

Graphical abstract: Formation of wide-bandgap, highly transparent and compact Cd1−xZnxS films with dynamically controlled pH in chemical bath deposition

Supplementary files

Article information

Article type
Paper
Submitted
07 Feb 2023
Accepted
09 Apr 2023
First published
10 Apr 2023

J. Mater. Chem. C, 2023,11, 6360-6375

Formation of wide-bandgap, highly transparent and compact Cd1−xZnxS films with dynamically controlled pH in chemical bath deposition

Md. M. Hoque, Md. A. Zubair and R. N. Sajjad, J. Mater. Chem. C, 2023, 11, 6360 DOI: 10.1039/D3TC00450C

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