Interfacial engineering of Si anodes by confined doping of Co toward high initial coulombic efficiency

Yuanyuan Han; Haoyu Fu; Guihuan Chen; Xiaoshan Wang; Yue Zhao; Xiang Sui; Zhiqiang Zhao; Xiancheng Sang; Qinghao Li; Qiang Li

doi:10.1039/D3CC05365B

Interfacial engineering of Si anodes by confined doping of Co toward high initial coulombic efficiency†

Yuanyuan Han,‡^a Haoyu Fu,‡^a Guihuan Chen,

*^a Xiaoshan Wang,^a Yue Zhao,^a Xiang Sui,^a Zhiqiang Zhao,^a Xiancheng Sang,^a Qinghao Li^a and Qiang Li

*^a

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* Corresponding authors

^a College of Physics, Weihai Innovation Research Institute, College of Materials Science and Engineering, Qingdao University, Qingdao 266071, China
E-mail: liqiang@qdu.edu.cn, chenguihuan@qdu.edu.cn

Abstract

A Si/Si–Co multilayer film, with Co confined doping in the silicon anode, was successfully fabricated by alternating magnetron sputtering, achieving both metal doping and surface coating. Operando magnetometry revealed the stability of the Si–Co layers during cycling. The symmetrical Si–Co layers can protect the overall structure of the Si anodes and facilitate electron conduction. Consequently, the resultant Si anode delivers an impressive initial coulombic efficiency of 93.4% with large capacity retention of 85.07% after 100 cycles.

Chemical Communications

Interfacial engineering of Si anodes by confined doping of Co toward high initial coulombic efficiency†

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Interfacial engineering of Si anodes by confined doping of Co toward high initial coulombic efficiency

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