Study on power consumption and heat transfer paths in Czochralski silicon crystal growth based on global 3D numerical simulation

Abstract

Power consumption is a significant part of the cost for growing silicon crystals by the Czochralski (CZ) method, and reducing power consumption is a key technical concern, especially for the photovoltaic industry. In this study, a global 3D numerical model of the CZ furnace was developed, and the non-axisymmetric furnace components such as the heater electrodes and exhaust vents were taken into consideration. Based on the model, numerical simulations were performed to study the power consumption and heat transfer in the CZ furnace, and the results were verified by comparing with experimental data. The power consumption distribution and paths of convective, radiative, and conductive heat transfer in the CZ furnace are systematically analyzed. The influence of silicon crystal length on heat transfer paths was also investigated. This study can provide an important theoretical reference for achieving a refined power reduction in CZ silicon crystal growth.