Issue 42, 2024

Single crystal growth and electrical transport of two-dimensional van der Waals antiferromagnetic Fe1.3Te

Abstract

Two-dimensional (2D) van der Waals (vdW) materials with promising electrical, magnetic, optical, and mechanical properties have shown great potential for next-generation electronics and spintronics. Among them, vdW Fe1+xTe with varying Fe contents exhibits exotic quantum phenomena such as magnetism and superconductivity. However, they are still underexplored for Fe1+xTe with sufficiently-high Fe contents, and the electrical transport properties of Fe1+xTe crystals with higher Fe contents are still unknown. Here, we grow a vdW antiferromagnetic crystal Fe1.3Te with a Néel temperature of ∼66 K by a Sn/Te-flux method. The as-grown Fe1.3Te has the highest Fe content (x = 0.3) compared to known Fe1+xTe systems, and shows a typical structural phase transition at ∼49 K. As the temperature increases, a transition from electron-dominated to hole-dominated charge carriers is observed in exfoliated Fe1.3Te nanosheets, with a decrease in transition temperature from ∼44 to ∼38 K by reducing the thickness from 323 to 19 nm. These findings provide opportunities for the study of Fe-based vdW magnets and their potential applications.

Graphical abstract: Single crystal growth and electrical transport of two-dimensional van der Waals antiferromagnetic Fe1.3Te

Article information

Article type
Paper
Submitted
12 Sep 2024
Accepted
20 Sep 2024
First published
23 Sep 2024

CrystEngComm, 2024,26, 6045-6051

Single crystal growth and electrical transport of two-dimensional van der Waals antiferromagnetic Fe1.3Te

G. Zhang, A. Annas, W. Lei, H. Wu, L. Yang, W. Jin, B. Xiao, J. Yu, W. Zhang and H. Chang, CrystEngComm, 2024, 26, 6045 DOI: 10.1039/D4CE00926F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements