Equibiaxial strain regulates the electronic structure and mechanical, piezoelectric, and thermal transport properties of the 2H-phase monolayers CrX2 (X = S, Se, Te)

Abstract

A superior piezoelectric coefficient and diminutive lattice thermal conductivity are advantageous for the application of a two-dimensional semiconductor in piezoelectric and thermoelectric devices, whereas an imperfect piezoelectric coefficient and large lattice thermal conductivity limit the practical application of the material. In this study, we investigate how the equibiaxial strain regulates the electronic structure, and mechanical, piezoelectric, and thermal transport properties. Tensile strain can deduce the bandgap of the monolayer CrX₂ (X = S, Se, Te), whereas compressive strain has an opposite effect. Additionally, the transition from a semiconductor to a metal state and the transition between direct and indirect band gaps will occur at appropriate strain values, so the electronic structure can be effectively regulated. The reason is the different sensitivities of the energy corresponding to K and Γ on the valence band to the strain due to the changes in different orbital overlaps. The tensile strain can effectively improve the flexibility of monolayers CrX₂, which provides a possibility for the application of flexible electronic devices. Furthermore, the tensile strain can improve the piezoelectric strain coefficient of monolayers CrX₂. Using Slacks formulation, we calculate the lattice thermal conductivity, and the tensile biaxial strain can reduce the lattice thermal conductivity. Our research provides a strategy to enhance the piezoelectric and flexible electronic applications and decrease the lattice thermal conductivity, which can benefit the thermoelectric applications.