Single walled carbon nanotubes band gap width measurement and the influence of nitrogen doping research

Abstract

The adjustment and measurement of the band gap width of single-walled carbon nanotubes are crucial for optimizing the design and enhancing the performance of carbon-based devices. This study utilizes the relationship between the band gap and temperature of semiconductor-based carbon nanotubes. The electrical conductivity of carbon nanotubes was obtained at various temperatures, and the corresponding band gap width (0.57 eV) was determined. The introduction of nitrogen results in a reduction of the band gap width and an increase in current flow between the device source and drain electrodes. Theoretical calculation demonstrated that nitrogen doping not only increases the conductivity of carbon nanotubes but also effectively inhibits the Schottky barrier between carbon nanotubes and metal electrodes. The Schottky barrier and the internal electric field can be effectively modulated via nitrogen doping in carbon nanotubes, which enhances the performance of carbon-based devices.