Critical role of dopant in NiOx hole transport layer for mitigating redox reactivity at NiOx/absorber interface in mixed cation perovskite solar cells

Abstract

Redox chemistry transpiring at the interface of NiO_x hole transport layer (HTL) and perovskite absorber is a critical phenomenon leading to relatively low values of open circuit voltage (V_OC) and fill factor (FF), in turn hampering the overall device performance and stability. In this work, for the first time, the hard acid electronic nature of vanadium (V) dopant in nickel oxide HTL is opportunely exploited to mitigate the undesirable Lewis acid–base reactions occurring at the HTL/mixed-cation perovskite interface. The findings of the study show that vanadium doping results in improved interfacial energetics along with decreased V_OC loss, confirming that despite the increase in Ni³⁺/Ni²⁺ ratio with the vanadium dopant, the redox reaction catalyzed by Ni³⁺ ions is kept under check. Vanadium doping also aided in the realization of superior perovskite films with lower Urbach energy, which translated into one order increase in maximum photoinduced carrier generation rate per unit volume. Carrier dynamics investigations show fewer defect states (lower V_TFL) and trap-assisted recombination (lower diode ideality factor), which optimize the devices’ photovoltaic performance. These benefits collectively contribute to low-loss charge transfer across the NiO_x/mixed-cation perovskite interface, which increases the relative efficiency by ∼30% for 5 wt% V-doped NiO_x devices compared to pristine NiO_x devices, augmented by an increase in device J–V parameters like open circuit voltage (V_OC), short circuit current density (J_SC), and fill factor (FF).