Issue 23, 2024

Synthesis and theoretical study of a mixed-ligand indium(iii) complex for fabrication of β-In2S3 thin films via chemical vapor deposition

Abstract

Two new heteroleptic indium aminothiolate compounds [InClSC2H4N(Me)SC2H4]3[1] and [InSC2H4N(Me)SC2H4(C8H5F3NO)] [2] were synthesized by in situ salt metathesis reaction involving indium trichloride, aminothiol, and N,O-β-heteroarylalkenol ligands. The complexes were subsequently purified and thoroughly characterized by nuclear magnetic resonance (NMR) analysis, elemental studies, mass spectroscopy, and X-ray diffraction single crystal analysis that showed a trigonal bipyramidal coordination of In(III) in both complexes. Thermogravimetric analysis of [1] revealed a multistep decomposition pathway and the formation of In2S3 at 350 °C, which differed from the pattern of [2] due to the lower thermal stability of [1]. Compound [2] exhibited a three-step decomposition process, resulting in the formation of In2S3 at 300 °C. The Chemical Vapor Deposition (CVD) experiment involving compound [2] was conducted on the FTO substrate, resulting in the production of singular-phase In2S3 deposits. A comprehensive characterization of these deposits, including crystal structure analysis via X-ray diffraction (XRD), and surface topography examination through scanning electron microscopy (SEM) has been completed. The presence of In–S units was also supported by the Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive spectroscopy (EDS) of the as-deposited films. Moreover, the electronic structure and thermal properties of compound [2] were investigated through DFT calculations. Electron density localization analysis revealed that the highest occupied molecular orbital (HOMO) exhibited dense concentration at the aminothiolate moiety of the complex, while the lowest unoccupied molecular orbital (LUMO) predominantly resided at the N,O-β-heteroarylalkenolate ligand. Furthermore, our computational investigation has validated the formation of indium sulfide by elucidating an intermediate state, effectively identified through EI-MS analysis, as one of the plausible pathways for obtaining In2S3. This intermediate state comprises the aminothiolate ligand (LNS) coordinated with indium metal.

Graphical abstract: Synthesis and theoretical study of a mixed-ligand indium(iii) complex for fabrication of β-In2S3 thin films via chemical vapor deposition

Supplementary files

Article information

Article type
Paper
Submitted
08 Feb 2024
Accepted
16 May 2024
First published
17 May 2024
This article is Open Access
Creative Commons BY license

Dalton Trans., 2024,53, 9874-9886

Synthesis and theoretical study of a mixed-ligand indium(III) complex for fabrication of β-In2S3 thin films via chemical vapor deposition

C. K. Amadi, T. Karimpour, M. Jafari, Z. Peng, D. Van Gerven, V. Brune, F. Hartl, M. Siaj and S. Mathur, Dalton Trans., 2024, 53, 9874 DOI: 10.1039/D4DT00394B

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