Temperature-tunable terahertz metamaterial device based on VO2 phase transition principle

Abstract

Terahertz devices play an irreplaceable role in the development of terahertz technology. However, at present, it is difficult for most natural materials to respond in the terahertz band, making the devices made of them perform poorly. In order to realize the diversity and tunability of device functions, we designed a terahertz metamaterial device composed of the thermally-induced phase change material VO₂. The device structure is composed of a Au bottom layer, a SiO₂ dielectric layer and a VO₂ top layer. Through software simulation, we found that when T = 313 K, the device has complete reflection ability in the whole terahertz band. When T = 342 K, the average absorptivity is above 95% in the ultra-wide band range of 4.71–9.41 THz, and the absorptivity reaches an amazing 0.99999 at 6.31 THz. Thus, the maximum thermal modulation range of the device is 0.001–0.99999. The Bruggeman effective medium theory clarifies the phase transition characteristics of vanadium dioxide. The Drude model establishes the functional relationship between the conductivity of vanadium dioxide and temperature. The basic principle of high absorption was described using the impedance matching theory. We also drew the electric field intensity diagram during the temperature rise of the device to further confirm the reason for the change in the device performance. In addition, the influence of the absence of different structural layers on the absorptivity was simulated, which reflected the role of each layer structure more intuitively. We also explored the influence of the geometric size of the device on the absorptivity, which provided a certain reference value for practical application. In short, we have designed a tunable terahertz device with simple structure, high absorptivity, and wide absorption bandwidth, which can be used in the fields of energy collection, electromagnetic stealth, and modulation.