Issue 6, 2024

New generation copper-based interconnection from nanoporous CuSn alloy film sintered at low temperatures

Abstract

Semiconductor devices require interconnections with high current-carrying capacity, capable of withstanding significant thermal stress. Third-generation semiconductors often operate under conditions that demand temperatures as high as 300 °C. To address this need, nanomaterials have emerged as promising candidates for on-chip interconnects due to their lower melting temperatures compared to their bulk counterparts. Recently, we introduced an innovative synthetic method for tin (Sn) coated nanoporous copper (np-Cu) material that leads to formation of a compact Cu3Sn intermetallic (IM) bond by sintering at temperatures as low as 200 °C. Our research aims to further advance this approach by directly utilizing a np-CuSn film, with the potential to enable sintering at even lower temperatures. This manuscript outlines the development of a two-step synthesis process, involving the electrochemical deposition of a CuSn precursor alloy followed by partial dealloying, realized by oxidative removal of Sn. This process yields a np-Cu6Sn5 IM film. Our objective is to subject the synthesized IM nanomaterial to sintering between two copper surfaces, ultimately forming a Cu3Sn IM joint. The successful creation of defect-free, densely packed pad-to-pad joints for electronic interconnections was achieved through sintering in a forming gas atmosphere at a pressure of 20 MPa and at various temperatures, including 300 °C, 250 °C, 225 °C, and 180 °C.

Graphical abstract: New generation copper-based interconnection from nanoporous CuSn alloy film sintered at low temperatures

Article information

Article type
Paper
Submitted
30 Nov 2023
Accepted
31 Jan 2024
First published
02 Feb 2024
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2024,5, 2285-2295

New generation copper-based interconnection from nanoporous CuSn alloy film sintered at low temperatures

E. Castillo, A. F. Pasha, Z. I. Larson and N. Dimitrov, Mater. Adv., 2024, 5, 2285 DOI: 10.1039/D3MA01071F

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements