Issue 22, 2024

Synthesis and magneto-dielectric properties of Ti-doped Ni0.5Zn0.5TixFe2−xO4 ferrite via a conventional sol–gel process

Abstract

Ni–Zn-based ferrites (NZFO) need to possess the ideal ratio of dielectric and magnetic characteristics for uses involving electromagnetic fields. Consequently, the NZFO system has been modified by Ti4+ substitution at Fe3+ producing Ni0.5Zn0.5TixFe2−xO4 (x = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) and a conventional sol–gel process was followed for the synthesis. The structure of the synthesized samples was evaluated from the X-ray diffraction (XRD) patterns. Fourier transform infrared (FTIR) measurement provided information on chemical interaction with thermodynamic conditions. In addition, the grain sizes were obtained from scanning electron microscopy (SEM). Furthermore, the studied samples exhibit a notable light absorption in the visible spectrum with band gaps between 3.8 and 4.8 eV. The magneto-dielectric properties were analyzed by field (H) dependent magnetization (M), frequency-dependent permeability (μ), and permittivity (ε) measurements. Ti4+ substitution in NZFO led to a decrease in magnetic saturation (Ms) and μ while the values of creased and improved the mismatching impedance (Z/η0 = (μ′/ε′)1/2). The lowest value of Ms (14 emu g−1) is achieved for the sample with x = 0.1 for which μ is also the lowest. Finally, a stable value of Z/η0 (∼4.0) has been obtained for the x = 0.10 sample over a wide range of frequencies (1–10 MHz), making it suitable as a miniaturizing device material in this frequency range.

Graphical abstract: Synthesis and magneto-dielectric properties of Ti-doped Ni0.5Zn0.5TixFe2−xO4 ferrite via a conventional sol–gel process

Article information

Article type
Paper
Submitted
23 May 2024
Accepted
09 Oct 2024
First published
30 Oct 2024
This article is Open Access
Creative Commons BY license

Mater. Adv., 2024,5, 9041-9054

Synthesis and magneto-dielectric properties of Ti-doped Ni0.5Zn0.5TixFe2−xO4 ferrite via a conventional sol–gel process

M. Farzana Alam, M. Atikur Rahman, Md. S. Hossain, M. N. I. Khan, R. Rashid, M. Saiful Islam, W. Ghann, M. K. Alam and J. Uddin, Mater. Adv., 2024, 5, 9041 DOI: 10.1039/D4MA00529E

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