Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Abstract

Solution-processed colloidal III–V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III–V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm⁻²) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.