Issue 2, 2024

Modifying BiVO4 as a photocatalyst for water oxidation using constant-duration alkaline-etched post treatments

Abstract

BiVO4 with suitable band edges and a small band gap is considered an efficient photocatalyst for the oxygen evolution reaction (OER), but short charge-transfer lengths limit its photocatalytic ability. Increasing active sites can essentially enhance oxidation reactions and photocatalytic ability. The alkaline etching technique can refine the surface properties of BiVO4 by introducing oxygen vacancies and possibly establishing a heterojunction, but suitable alkaline etching methods are rarely discussed. In this study, three alkaline etching methods, including hydrothermal, soaking, and electrodeposition processes, are first applied for a constant duration to tailor the surface properties of BiVO4 as a photocatalyst for the OER. Alkaline-etched BiVO4 prepared using hydrothermal and soaking processes shows better photocatalytic abilities due to the generation of additional oxygen vacancies, while poor photocatalytic ability is found for that fabricated using electrodeposition due to the formation of less photocatalytic VO2. The highest photocurrent density of 2.38 mA cm−2 is obtained at 1.23 V versus a reversible hydrogen electrode in an electrolyte without a hole scavenger for the BiVO4 etched in the hydrothermal process, while the untreated BiVO4 presents a photocurrent density of 0.58 mA cm−2. A photocurrent retention of 92.3% is achieved after 5000 seconds of continuous illumination. The study supplies blueprints for establishing effective alkaline etching methods for enhancing the photocatalytic ability of BiVO4, with the exception of time costs.

Graphical abstract: Modifying BiVO4 as a photocatalyst for water oxidation using constant-duration alkaline-etched post treatments

Article information

Article type
Paper
Submitted
28 Sep 2023
Accepted
21 Nov 2023
First published
07 Dec 2023

New J. Chem., 2024,48, 569-577

Modifying BiVO4 as a photocatalyst for water oxidation using constant-duration alkaline-etched post treatments

C. Hsu, K. Chuang, H. Huang, B. Pan, H. Chen, S. Husain, S. Yougbaré, Y. Hsiao, Y. Wu and L. Lin, New J. Chem., 2024, 48, 569 DOI: 10.1039/D3NJ04544G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements