Issue 36, 2024

Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning

Abstract

Despite high demand for gold film nanostructuring, patterning gold at the nanoscale still presents considerable challenges for current foundry-compatible processes. Here, we present a method based on abrasive-free chemical mechanical planarization (CMP) to planarize nanostructured gold surfaces with high selectivity against SiO2. The method is efficient in a damascene process and industry-compatible. Investigations into the material removal mechanism explore the effects of CMP parameters and show that the material removal rate is highly tunable with changes in slurry composition. Millimeter-scale arrays of gold nanostructures embedded in SiO2 were fabricated and the planarization dynamics were monitored over time, leading to the identification of distinct planarization phases and their correlation with the material removal mechanism. Finally, plasmonic cavities of gold nanostructure arrays over a gold mirror were fabricated. The cavities exhibited efficient plasmonic resonance in the visible range, aligning well with simulation results.

Graphical abstract: Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning

Supplementary files

Article information

Article type
Paper
Submitted
24 Jun 2024
Accepted
06 Aug 2024
First published
08 Aug 2024
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2024,16, 16861-16869

Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning

R. Gherman, G. Beaudin, R. Stricher, J. Bryche, P. Levesque, F. Fillion-Gourdeau, S. G. MacLean, D. Drouin, P. G. Charette and S. Ecoffey, Nanoscale, 2024, 16, 16861 DOI: 10.1039/D4NR02610A

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