Durable dielectric switching and photo-responsivity in a Dion–Jacobson hybrid perovskite semiconductor

Abstract

Two-dimensional hybrid perovskite (2DHPs) semiconductors have shown great potential in multifunctional applications, especially dielectric switches and photoelectric detection owing to their diverse structural feasibility and excellent semiconducting features. However, most of the reported 2DHPs belong to the Ruddlesden–Popper (R–P) type, which unavoidably suffers from weak van der Waals interactions, degrading their reliability for long-term operation. The recently developed environmentally stable Dion–Jacobson (D–J) phase perovskites provide us with an opportunity to design 2DHPs with durable working performances. Here, we report a D–J phase perovskite material (BDA)MA₂Pb₃Br₁₀ (1, where BDA²⁺ is 1,4-butanediammomium and MA⁺ is methylammonium) that displays a remarkable switchable dielectric anomaly at 322 K. Meanwhile, the single crystal devices of 1 exhibit impressive photoelectric detection performances, featuring a large on/off current ratio (∼6.19 × 10³), remarkable responsivity (∼11.79 mA W⁻¹), and high detectivity (∼2.9 × 10¹¹ Jones). Additionally, due to the phase stability conferred by the D–J structure, these devices exhibit excellent photoresponsivity and resistance to fatigue, as evidenced by over 1200 photoresponse cycles, along with noteworthy stability in dielectric switching (maintained for two months). This study presents a comprehensive methodology for designing highly stable D–J phase perovskites with exceptional performance in dielectric switching and photoelectric detection, thereby expanding the repertoire of 2D D–J multifunctional hybrid perovskites.