Issue 20, 2024

Dopant-mediated carrier tunneling in short-channel two-dimensional transistors

Abstract

Substitutional doping has played a pivotal role in silicon-based electronics and holds equivalent importance for emerging two-dimensional (2D) semiconductors, which show promise for advanced node technologies. However, the intricate role of dopant atoms in 2D transistors, particularly in short-channel cases, remains elusive and poses a challenging task for experimental exploration. In this study, using density functional theory (DFT) calculations and quantum transport simulations, we reveal the dual functionalities of V dopants in short-channel 2D transistors constructed with lateral VS2–MoS2–VS2 heterostructures. Depending on the channel length, the V dopant in the MoS2 channel, manifested by localized density of states (LDOS), can serve as either a “relay station” to facilitate carrier tunneling or as a scattering center that reduces source-drain currents. This work hence provides valuable insights into the doping effect of short-channel 2D transistors, and opens up possibilities for new electronic applications that harness the delicate properties of these substitutional dopants.

Graphical abstract: Dopant-mediated carrier tunneling in short-channel two-dimensional transistors

Supplementary files

Article information

Article type
Research Article
Submitted
10 Jun 2024
Accepted
08 Aug 2024
First published
09 Aug 2024
This article is Open Access
Creative Commons BY-NC license

Mater. Chem. Front., 2024,8, 3300-3307

Dopant-mediated carrier tunneling in short-channel two-dimensional transistors

Y. Lu, C. Li, S. Yang, M. Yuan, S. Qiao and Q. Ji, Mater. Chem. Front., 2024, 8, 3300 DOI: 10.1039/D4QM00494A

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements