Issue 3, 2024, Issue in Progress

High-sensitivity hybrid MoSe2/AgInGaS quantum dot heterojunction photodetector

Abstract

Zero-dimensional (0D)–two-dimensional (2D) hybrid photodetectors have received widespread attention due to their outstanding photoelectric performances. However, these devices with high performances mainly employ quantum dots that contain toxic elements as sensitizing layers, which restricts their practical applications. In this work, we used eco-friendly AgInGaS quantum dots (AIGS-QDs) as a highly light-absorbing layer and molybdenum diselenide (MoSe2) as a charge transfer layer to construct a 0D–2D hybrid photodetector. Notably, we observed that MoSe2 strongly quenches the photoluminescence (PL) of AIGS-QDs and decreases the decay time of PL in the MoSe2/AIGS-QDs heterojunction. The MoSe2/AIGS-QDs hybrid photodetector demonstrates a responsivity of 14.3 A W−1 and a high detectivity of 6.4 × 1011 Jones. Moreover, the detectivity of the hybrid phototransistor is significantly enhanced by more than three times compared with that of the MoSe2 photodetector. Our work suggests that 0D–2D hybrid photodetectors with multiplex I-III-VI QDs provide promising potential for future high-sensitivity photodetectors.

Graphical abstract: High-sensitivity hybrid MoSe2/AgInGaS quantum dot heterojunction photodetector

Supplementary files

Article information

Article type
Paper
Submitted
24 Oct 2023
Accepted
04 Jan 2024
First published
09 Jan 2024
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2024,14, 1962-1969

High-sensitivity hybrid MoSe2/AgInGaS quantum dot heterojunction photodetector

X. Zhao, X. Wang, R. Jia, Y. Lin, T. Guo, L. Wu, X. Hu, T. Zhao, D. Yan, L. zhu, Z. Chen, X. Xu, X. Chen and X. Song, RSC Adv., 2024, 14, 1962 DOI: 10.1039/D3RA07240A

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