A solid-state p–n tandem dye-sensitized solar cell

Abstract

The development of p–n tandem dye-sensitized solar cells (t-DSCs) offers the potential for substantial open-circuit voltages, holding great promise for a wide range of applications, particularly in the fields of photovoltaics and photoelectrochemical devices. Most reported t-DSCs are liquid-based, and suffer from unsatisfactory stability due to the leakage of liquid electrolytes and photovoltage that is limited to the energy difference of the two utilized semiconductors. In this study, we present the first realization of a solid-state p–n tandem dye-sensitized solar cell that incorporates both p-type and n-type solid-state dye-sensitized solar cells (ssDSCs) by using a transparent indium-doped tin oxide (ITO) back contact for both sides. Notably, this tandem system shows a remarkable open-circuit voltage of 1.4 V, surpassing the constraints of its liquid-based counterparts. Although the performance variations between p-ssDSCs and n-ssDSCs hint at challenges related to charge recombination and the efficiency of p-ssDSCs, this study underscores the significant potential inherent in solid-state tandem configurations.