Issue 8, 2024

An optimized heterointerface of BiVO4/C3N4 by Co single atom and F-doping for boosting photoelectrochemical water splitting

Abstract

Inefficient charge separation and surface trapping states are universal challenges for photoelectrochemical water splitting. Herein, we demonstrate an effective strategy by optimizing the band structure of the heterojunction of Co single atom-doped carbon nitride (C3N4) and F-doped BiVO4 to enhance the photoelectrochemical performance of oxygen evolution. The introduction of Co single atoms enhances the surface kinetics of C3N4, and Co- and F-doping induces both conduction band and valence band adjustments for C3N4 and BiVO4, which promotes the charge separation of photogenerated electron–hole pairs at the F-doped BiVO4 and Co-doped C3N4 heterojunction. This strategy results in a reduced onset potential and a high current density of 5.89 mA cm−2 at 1.23 VRHE. This proof-of-principle work sheds light on rational design and fabrication of integrated photoanodes for robust solar energy conversion photoelectrodes.

Graphical abstract: An optimized heterointerface of BiVO4/C3N4 by Co single atom and F-doping for boosting photoelectrochemical water splitting

Supplementary files

Article information

Article type
Paper
Submitted
26 Oct 2023
Accepted
14 Jan 2024
First published
15 Jan 2024

J. Mater. Chem. A, 2024,12, 4635-4642

An optimized heterointerface of BiVO4/C3N4 by Co single atom and F-doping for boosting photoelectrochemical water splitting

S. Xia, F. Xu and B. Weng, J. Mater. Chem. A, 2024, 12, 4635 DOI: 10.1039/D3TA06532D

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