NIR-triggered logic gate in MXene-modified perovskite resistive random access memory

Abstract

The resistive-switching-based logic gates are the promising electronic components for future digital logic operation in integrated circuits based on resistive random access memories (RRAMs). In particular, the logic gates controlled by near-infrared (NIR) light within the tissue optical window become more attractive in the practical application of in vivo manually controlled biocompatible microchips. In this work, fibrous MXene@MAPbI₃-based resistive switching storage devices that are NIR-responsive at 1064 nm are prepared via a simple dip-coating process by introducing monolayer Ti₃C₂T_x-TBAOH MXene nanosheets with an excellent NIR absorption into the perovskite precursor solution. The 0.05 wt% Ti₃C₂T_x-TBAOH-modified MAPbI₃-based RRAM device achieves the highest ON/OFF ratio of approximately 10⁸, which is two orders of magnitude higher than the pristine device. Ti₃C₂T_x-TBAOH-modification produces a low SET voltage of +1.34 V under 1064-nm laser illumination compared with +2.22 V in the dark. More interestingly, the 1064-nm laser illumination on the Ti₃C₂T_x-TBAOH-modified device presents a well-defined NIR-responsive state at 1064 nm in the perovskite RRAM device and finally realizes NIR-controlled logic gates at 1064 nm for in-memory computing, such as “AND”, “OR” and “NOT”. This kind of NIR-responsive fibrous resistive switching logic device has potential application in future e-textiles as fundamental building blocks for integrated data-storing and information-processing function, especially in the in vivo manually controlled biocompatible microchips.