A high-performance magnetoelectric non-volatile light-emitting memory device

Abstract

In this era of exponential progress in the internet of things (IoT) and artificial intelligence (AI), there is a pressing demand for devices that offer greater storage density, faster transmission rate, and enhanced data security within the realm of information technology. To achieve these advantages, a novel magnetoelectric light-emitting memory (LEM) device that can control the output light intensity and electrical signal based on the input magnetic and electric field strengths has been proposed and demonstrated. An ITO/P3HT–COOH/CdSe–ZnS QDs/ZnO/Ag quantum dot light-emitting diode (QLED), an Ag/PMMA/Au resistive random access memory (RRAM), and a PDMS : FeNi/AgNWs/air gap/Au magnetoelectric device with a micro-pyramid structure are integrated in tandem. This novel integrated device can receive magnetic and electrical input signals and transform them into electrical and optical output signals. In addition, it possesses several intriguing characteristics, such as a low operation current, a high ON/OFF ratio, multiple levels, and a controllable light intensity with magnetic stimuli to achieve a paralleled reading process. Furthermore, the magnetoelectric LEM device can emit specific patterns of light. It is possible to read the encoded data when the desired magnitude of a magnetic field, electric voltage, and the correct light pattern are satisfied. Therefore, this brand-new and creative device is very useful and timely for application in many fields, such as data communication and encryption technology.