Progress in photodetector devices utilizing transition metal dichalcogenides

Abstract

Transition metal dichalcogenides (TMDs) with two dimensions (2D) exhibit remarkable electronic and optoelectronic properties that have made them a highly promising platform for the development of photodetectors (PDs). Highly efficient PDs can be made possible by the remarkable properties of 2D materials, including their large charge carrier mobility, high transparency, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is covered in detail in this article, with an emphasis on the important characteristics that set them apart from PDs based on other integrated materials. A variety of 2D TMD-based PD configurations are examined in this review, such as TMD–quantum dot (QD) configurations, TMD–graphene (Gr) hybrids, TMD–MXene composites, TMD–perovskite heterostructures, and single TMDs. The special qualities and benefits of each configuration are examined in great detail. This paper highlights the remarkable performance capabilities of 2D TMD-based PDs and provides a thorough review of recent developments in this field. Using state-of-the-art techniques, these include an ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity. The article concludes by discussing the current issues facing the field of PDs and outlining the prospects for ground-breaking discoveries in this quickly developing field of study. The outlook highlights the potential for 2D TMD-based PDs going forward and offers promising avenues for additional development and use.