Tungsten-doped barium stannate as a transparent conducting film

Abstract

Near-infrared (NIR) transparent conducting films have recently garnered significant attention due to their relevance in various emerging devices. However, La-doped BaSnO₃ (BSO) with high carrier mobility is hampered by the challenge of carrier reflection in the NIR region. In this study, we develop an approach to reconcile the conflict between conductivity and NIR transparency by incorporating W dopants into the Sn sites of BSO thin films. Our findings reveal that a 6% W-doped BSO thin film exhibits a remarkable carrier mobility of 26.6 cm² V⁻¹ s⁻¹ (at a carrier concentration of 1.11 × 10²⁰ cm⁻³) and achieves exceptional NIR transmittance of ∼70% (at a wavelength of 2000 nm). This performance surpasses that of BSO films doped with other ions on the Sn sites. Furthermore, it is evidenced that the enhanced optoelectrical performance arises from the relatively lower effective mass of W ions, in contrast to Ta and Sb ions, when doped into BSO thin films. These outcomes provide valuable insights for the advancement of NIR transparent conducting films through the strategic incorporation of d-block ions into the Sn sites of stannate materials.