Issue 8, 2024

Improved electrical performance of ultra-thin BexMg1−xO films using super-cycle atomic layer deposition

Abstract

This research explores the high-k dielectric behavior of ultra-thin BeMgO (BMO) films (≪5 nm) using the super-cycle atomic layer deposition (ALD) technique. The fabricated metal–insulator–metal devices, utilizing sputtered TiN as both bottom and top electrodes, demonstrate low leakage current and high capacitance characteristics with a minimum equivalent oxide thickness of 1.30 nm. The dielectric constants of the films are significantly higher than those of pure MgO or BeO films, reaching a maximum value of 14.2 at a film composition of Be0.29Mg0.71O, indicating the realization of the cubic rocksalt configuration of Be–O bonds. The rocksalt phase remains dominant even in Be-rich BMO films due to the structural coherence with the TiN electrodes, revealing the intricate interplay between composition and interface engineering. BMO films showed exceptional electrical stability even at a film thickness of 2.5 nm, demonstrating their strong dielectric strength. The trap-assisted tunneling mechanism governed the leakage current at this thickness. Such attributes make BMO films highly appealing in dynamic random-access memory capacitors, where the industry's relentless drive toward miniaturization necessitates ultra-thin dielectric films with uncompromising performance.

Graphical abstract: Improved electrical performance of ultra-thin BexMg1−xO films using super-cycle atomic layer deposition

Supplementary files

Article information

Article type
Paper
Submitted
24 Nov 2023
Accepted
22 Jan 2024
First published
23 Jan 2024
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2024,12, 2714-2722

Improved electrical performance of ultra-thin BexMg1−xO films using super-cycle atomic layer deposition

H. Song, B. Wang, J. Shin, Y. Park, T. K. Kim, H. Paik, H. Seo, J. Lim, D. Kwon, K. Lee, Y. S. Kim, D. H. Shin and C. S. Hwang, J. Mater. Chem. C, 2024, 12, 2714 DOI: 10.1039/D3TC04338J

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