Issue 14, 2024

Modulating Fermi energy in few-layer MoS2via metal passivation with enhanced detectivity for near IR photodetector

Abstract

Atomic layered molybdenum sulfide (MoS2) opens new avenues for healthcare, protective surveillance and optical communications using rationally developed broadband photodetectors as it exhibits high carrier mobility and high optical transparency. The current research shows that the good photo response of few-layered MoS2 prepared via chemical vapor deposition (CVD) can be surprisingly improved by boosting its charge mobility via metal surface passivation. The passivation of Fe and Zn reduced the surface dangling bonds of MoS2. This led to the maximum photocurrent, spectral response (Rλ) and external quantum efficiency (EQE) of about 5.79 × 10−6 A, 1450 mA W−1 and 30.2%, respectively for Zn–MoS2. Upon illumination at 323 K, the current increased to 0.171 × 10−3 A with a large Seebeck coefficient of −45 mV K−1 at 318 K for Zn–MoS2. The increased Schottky barrier height (SBH) of about 0.39 eV for Zn-passivated MoS2 led to suppressed Fermi level pinning. Thus, rationally designed architecture provides a strategy for constructing 2D-based devices for photodetection.

Graphical abstract: Modulating Fermi energy in few-layer MoS2via metal passivation with enhanced detectivity for near IR photodetector

Supplementary files

Article information

Article type
Paper
Submitted
08 Dec 2023
Accepted
07 Feb 2024
First published
20 Mar 2024

J. Mater. Chem. C, 2024,12, 5247-5256

Modulating Fermi energy in few-layer MoS2via metal passivation with enhanced detectivity for near IR photodetector

R. Abinaya, E. Vinoth, S. Harish, S. Ponnusamy, J. Archana, M. Shimomura and M. Navaneethan, J. Mater. Chem. C, 2024, 12, 5247 DOI: 10.1039/D3TC04518H

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