Issue 16, 2024

Quadruple-well ferroelectricity and topological domain structures in strained Bi2O2Se

Abstract

Exotic dipole orders and topological domain structures in ferroelectrics are intriguing both for fundamental physics and device applications. Herein, based on DFT calculations, Monte Carlo and phase-field modeling, we reveal that appropriate strain engineering can enable a ferroelectric transition in high-mobility semiconductor bismuth oxyselenide Bi2O2Se throughout the entire 3D space. Furthermore, we explore the ferroelectric properties of Bi2O2Se under different strain conditions. Uniaxial strain induces a typical double degenerate ferroelectric state, while biaxially strained Bi2O2Se holds unusual quadruple-well dipole orders and a “two-step” 90° ferroelectric switching. These ferroelectric phase transitions are temperature-limited. More importantly, various types of spontaneous topological domain structures in biaxially strained ferroelectric Bi2O2Se are demonstrated, including vortex and anti-vortex patterns. Our work is expected to enrich the understanding of ferroelectric effects in Bi2O2Se, which is essential for practical application of ferroelectrics in next-generation high-performance functional electronic devices.

Graphical abstract: Quadruple-well ferroelectricity and topological domain structures in strained Bi2O2Se

Supplementary files

Article information

Article type
Paper
Submitted
22 Dec 2023
Accepted
25 Mar 2024
First published
26 Mar 2024

J. Mater. Chem. C, 2024,12, 5951-5957

Quadruple-well ferroelectricity and topological domain structures in strained Bi2O2Se

Z. Zhu, J. Hu, X. Yao and S. Zhao, J. Mater. Chem. C, 2024, 12, 5951 DOI: 10.1039/D3TC04733D

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