Solution epitaxy and photoelectric detection performance of halide–oxide perovskite heterojunction

Abstract

All-inorganic halide perovskites have attracted much attention in their applications due to their excellent optoelectronic properties. Here, we report the epitaxial deposition of high-quality CsPbBr₃ perovskite films on ABO₃ single-crystal substrates using a simple one-step solution spin coating method. The gradual optimization of process parameters plays a significant role in inhibiting the Volmer–Weber growth mode, and the improved film plays a major role in improving the photoelectric properties such as improving light absorption and extending the carrier life. Moreover, the dark current can be significantly reduced to a remarkable level of 2.37 × 10⁻¹⁰ A under stress modulation, while achieving an impressive switching ratio as high as 2.56 × 10⁴ and a light detection response of 1.55 A W⁻¹. Among them, the non-traditional epitaxial lattice matching method also plays a pivotal role in the formation of high-quality films with biaxial strain, and the heterojunction structure behavior of halide–oxide perovskites provides a promising avenue for the formation of high-performance perovskite photodetectors. This simple, fast, and low-cost solution spin coating method expands the horizons for the construction of multifunctional heterojunction optoelectronic devices.