A design strategy for high-performance vertical organic field-effect transistors based on reduced graphene oxide electrodes

Abstract

Achieving a high current density in vertical organic field-effect transistors (VOFETs) based on reduced graphene oxide (rGO) electrodes is a big challenge. The unique gate-tunable operation mechanism makes it difficult to understand and improve the device performance. Here, we systematically analyzed the device in terms of its resistance. Results suggested that the resistance of the rGO electrode plays a dominant role in the device. Based on this analysis, a highly-conductive ultrathin rGO electrode was prepared, and a p-type organic semiconductor with an appropriate energy level was chosen to fabricate the device. The device achieved a maximum current density of 134.5 mA cm⁻² and a current on/off ratio exceeding 10³ under a small drain voltage of −5 V. The current density represents the largest value reported for rGO-VOFETs and is superior to that of many graphene-based devices, exhibiting significant potential for future organic electronics.