Issue 35, 2024

Efficient triplet exciton phosphorescence quenching from a rhenium monolayer on silicon

Abstract

We report efficient triplet exciton phosphorescence quenching from a Langmuir–Blodgett monolayer of a modified rhenium(I) fac-tricarbonyl bipyridine complex on the surface of crystalline silicon substrates indicating energy transfer. We monitor the luminescence quenching using phosphorescence lifetime imaging microscopy (PLIM) measurements as a function of distance of the monolayer to the silicon surface and have fitted the experimental phosphorescence lifetimes to a classical optical model. Our results show up to 95% phosphorescence quenching when the monolayer is close to the silicon surface (∼2 nm) indicative of efficient triplet resonance energy transfer from the rhenium monolayer to the silicon substrate. We believe this to be the first report of triplet sensitisation of silicon as a function of distance by a metal complex, and the most efficient triplet phosphorescence quenching from silicon reported to date.

Graphical abstract: Efficient triplet exciton phosphorescence quenching from a rhenium monolayer on silicon

Supplementary files

Article information

Article type
Communication
Submitted
16 May 2024
Accepted
07 Aug 2024
First published
15 Aug 2024
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2024,12, 13822-13826

Efficient triplet exciton phosphorescence quenching from a rhenium monolayer on silicon

W. H. Banks, M. P. Coogan, T. Markvart and L. Danos, J. Mater. Chem. C, 2024, 12, 13822 DOI: 10.1039/D4TC02027H

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