Resistive switching memory from dielectric lignin for sustainable electronics

Abstract

Organic materials are currently at the forefront of research within the field of nanoelectronics, aiming to offer a sustainable alternative to existing technologies across a variety of applications, including memory storage. Lignin, a waste of the paper manufacturing industry, is usually destined to be combusted to feed other industrial processes. Nonetheless, lignin is part of the emerging class of organic materials, serving as a complementary component in devices. This paper details the electrical characterization of a device featuring interdigitated electrode patterns shorted by lignin. The device exhibits butterfly-shaped current–voltage characteristics with significant hysteresis, delineating two distinct resistive states that suggest its potential use for memory applications. Current–voltage characteristics, measured at different temperatures and pressures, are analysed as a function of the applied voltage to conclude that space-charge limited current and hopping are the main conduction mechanisms. As a memristor, the lignin-based device shows good stability and endurance after numerous read–write cycles as well as long data retention. Additionally, electrical impedance spectroscopy is applied to investigate the dielectric response and its influence on the memory effect. This study shed light on the electric properties of lignin and opens the way to a variety of applications, like demonstrated one in the memristor domain.