Issue 40, 2024

SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems

Abstract

In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning.

Graphical abstract: SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems

Supplementary files

Article information

Article type
Paper
Submitted
14 Jul 2024
Accepted
10 Sep 2024
First published
11 Sep 2024

J. Mater. Chem. C, 2024,12, 16551-16559

SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems

H. Park and S. Kim, J. Mater. Chem. C, 2024, 12, 16551 DOI: 10.1039/D4TC02992E

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