Issue 5, 2025
From the journal:

Physical Chemistry Chemical Physics

Correction: Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4

Xiaoqing Yang,ab   Pan Guo,b   Shunbo Hu,b   Zhibin Gao,c   Wenliang Yao,b   Jinrong Cheng,b   Samuel Poncé,de   Baigeng Wanga  and  Wei Ren*b  

* Corresponding authors

a School of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

b Physics Department, Materials Genome Institute, State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of High Temperature Superconductors, International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai, China
E-mail: renwei@shu.edu.cn

c State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China

d European Theoretical Spectroscopy Facility, Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, Chemin des Étoiles 8, B-1348 Louvain-la-Neuve, Belgium

e WEL Research Institute, Avenue Pasteur, 6, 1300 Wavre, Belgium

Abstract

Correction for ‘Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4’ by Xiaoqing Yang et al., Phys. Chem. Chem. Phys., 2024, 26, 21530–21537, https://doi.org/10.1039/D4CP02270J.

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Article information

DOI
https://doi.org/10.1039/D5CP90008E
Article type
Correction
Submitted
02 Jan 2025
Accepted
02 Jan 2025
First published
17 Jan 2025
This article is Open Access
Creative Commons BY license

Phys. Chem. Chem. Phys., 2025,27, 2852-2852

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Correction: Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4

X. Yang, P. Guo, S. Hu, Z. Gao, W. Yao, J. Cheng, S. Poncé, B. Wang and W. Ren, Phys. Chem. Chem. Phys., 2025, 27, 2852 DOI: 10.1039/D5CP90008E

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