Issue 13, 2025

Effect of Sb3+ doping on the electrochemical performance of a LATP solid electrolyte

Abstract

NASICON-type solid electrolyte Li1.3Al0.3Ti1.7P3O12 (LATP) is attractive because of its cheap raw materials, excellent air stability, and high ionic conductivity. However, due to the poor sintering performance and the easy reduction of Ti4+ by lithium metal, the grain boundary resistance is high and the interface between the solid electrolyte and lithium anode is unstable. In this paper, the LATP solid electrolyte was synthesized by doping Sb3+ with a larger ion radius and stronger electronegativity instead of Ti4+ by a solid-state method. The effects of different doping amounts of Sb3+ on the electrochemical performance of the solid electrolyte were systematically studied. It was found that a small amount of Sb3+ doping not only increases the concentration of oxygen vacancies, thereby facilitating Li+ ion transfer, but also induces the segregation of the secondary phase, LiTiPO5, at the grain boundaries, which promotes grain growth and increases density. Excessive Sb3+ doping, however, shifts the secondary phase from the orthorhombic to the triclinic system, which is less favorable for Li+ ion transfer, and leads to abnormal grain growth. The optimal total ionic conductivity of 0.56 mS cm−1 was achieved with a 0.5 wt% addition of Sb2O3, significantly enhancing the bulk density to 2.83 g cm−3. In addition, the Sb3+-doped LATP solid-state electrolyte-assembled full cell provides 152.30 mA h g−1 high discharge specific capacity, and can operate stably for 100 cycles, with an average coulomb efficiency of 98.5%.

Graphical abstract: Effect of Sb3+ doping on the electrochemical performance of a LATP solid electrolyte

Article information

Article type
Paper
Submitted
13 Jan 2025
Accepted
03 Mar 2025
First published
04 Mar 2025

New J. Chem., 2025,49, 5580-5588

Effect of Sb3+ doping on the electrochemical performance of a LATP solid electrolyte

J. Yuan, Y. Li, Y. Sun, B. Jiang and K. Li, New J. Chem., 2025, 49, 5580 DOI: 10.1039/D5NJ00172B

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