Issue 7, 2025

Electronic confinement induced quantum dot behavior in magic-angle twisted bilayer graphene

Abstract

Magic-angle twisted bilayer graphene (TBLG) has emerged as a versatile platform to explore correlated electron phases driven primarily by low-energy flat bands in moiré superlattices. While techniques for controlling the twist angle between graphene layers have spurred rapid experimental progress, understanding the effects of doping inhomogeneity on electronic transport in correlated electron systems remains challenging. In this work, we investigate the interplay of confinement and doping inhomogeneity on the electrical transport properties of TBLG by leveraging device dimensions and twist angles. We show that reducing device dimensions can magnify disorder potentials caused by doping inhomogeneity, resulting in pronounced carrier confinement. This phenomenon is evident in charge transport measurements, where the Coulomb blockade effect is observed. Temperature-dependent measurements reveal a large variation in the activation gap across the device. These findings highlight the critical role of doping inhomogeneity in TBLG and its significant impact on the transport properties of the system.

Graphical abstract: Electronic confinement induced quantum dot behavior in magic-angle twisted bilayer graphene

Supplementary files

Article information

Article type
Paper
Submitted
08 Jul 2024
Accepted
20 Dec 2024
First published
23 Dec 2024
This article is Open Access
Creative Commons BY license

Nanoscale, 2025,17, 4030-4037

Electronic confinement induced quantum dot behavior in magic-angle twisted bilayer graphene

B. Ghawri, P. Bastante, K. Watanabe, T. Taniguchi, M. Calame, M. L. Perrin and J. Zhang, Nanoscale, 2025, 17, 4030 DOI: 10.1039/D4NR02824D

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